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AGMH612D - MOSFET

Description

The AGMH612D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche test.
  • 100% DVDS tested.

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Datasheet Details

Part number AGMH612D
Manufacturer AGMSEMI
File Size 1.05 MB
Description MOSFET
Datasheet download datasheet AGMH612D Datasheet
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AGMH612D ● General Description The AGMH612D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche test ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 60V RDSON 10.5mΩ TO-252 Pin Configuration ID 58A Package Marking and Ordering Information Device Marking AGMH612D Device AGMH612D Device Package TO-252 Reel Size 330mm Tape width 16mm Quantity 2500 Table 1.
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