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AGMH70N70D - MOSFET

Description

The AGMH70N70D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 68V 6.8mΩ 80A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching TO-252 Pin Configuration.
  • Low Thermal resistance D.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGMH70N70D
Manufacturer AGMSEMI
File Size 856.51 KB
Description MOSFET
Datasheet download datasheet AGMH70N70D Datasheet
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AGMH70N70D ● General Description The AGMH70N70D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 68V 6.8mΩ 80A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching TO-252 Pin Configuration ■ Low Thermal resistance D ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application DS G ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device AGMH70N70D AGMH70N70D Device Package TO-252 Reel Size 330mm Tape width 16mm Quantity 2500 Table 1.
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