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AGMH70N90H - MOSFET

Description

The AGMH70N90H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s 65V 4.3mΩ 91A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss TO-263 Pin Configuration.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGMH70N90H
Manufacturer AGMSEMI
File Size 814.07 KB
Description MOSFET
Datasheet download datasheet AGMH70N90H Datasheet
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AGMH70N90H ● General Description The AGMH70N90H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. BVDSS RDSON ID ● Features 65V 4.3mΩ 91A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss TO-263 Pin Configuration ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package AGMH70N90H AGMH70N90H TO-263 Reel Size 330mm Table 1.
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