AGMS5N50D - MOSFET

Description

The AGMS5N50D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s BVDSS RDSON ID 500V 1.4Ω 5A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance TO-252 Pin Configuration D.

AGMSEMI

📥 Download Datasheet

Datasheet Details

Part number	AGMS5N50D
Manufacturer	AGMSEMI
File Size	1.44 MB
Description	MOSFET
Datasheet	AGMS5N50D Datasheet
Additional preview pages of the AGMS5N50D datasheet.

📁 Similar Datasheet

AGM-12864A-901 - LCD Modules (AGT)
AGM1032A-FLW-FBH - LCD (AZ Displays)
AGM1064B - LIQUID CRYSTAL DISPLAY (AZ Displays)
AGM1212B - LCD MODULE (AZ Displays)
AGM1212C - LCD MODULE (AZ Displays)
AGM1212D - LCD MODULE (AZ Displays)
AGM1212E - LCD MODULE (AZ Displays)
AGM1212I - LCD (AZ Displays)
AGM1212N - LCD (AZ Displays)
AGM1216A - LIQUID CRYSTAL DISPLAY (AZ Displays)

Other Datasheets by AGMSEMI

AGM035N10A - MOSFET
AGM035N10C - MOSFET
AGM038N10A - MOSFET
AGM042N10C - MOSFET
AGM042N10D - MOSFET
AGM056N10C - MOSFET
AGM056N10H - MOSFET
AGM065N10C - MOSFET

Full PDF Text Transcription

Click to expand full text

AGMS5N50D ● General Description The AGMS5N50D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 500V 1.4Ω 5A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance TO-252 Pin Configuration D ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver DS G Package Marking and Ordering Information Device Marking AGMS5N50D Device AGMS5N50D Device Package TO-252 Reel Size 330mm Table 1.

Published: Dec 28, 2024 |