1SS133T Datasheet PDF | AiT Semiconductor

AiT Semiconductor 1SS133T

The 1SS333 & 1SS333T are available in DO-34 and DO-35 Package • Glass sealed envelope • High speed • High reliability MECHANICAL DATA • CASE: DO-34、DO-35 • High-speed switching • Polarity: Color band denotes cathode PIN DESCRIPTION ORDERING INFORMATION Package Type DO-34 Part Number 1SS133 DO-35 1SS133T SPQ 500 pcs / Bag AiT provides all RoHS Compliant Products REV1.0 - DEC 2024 RELEASED - -1- AiT Semiconductor Inc. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied.

Part No.	1SS133T
Datasheet	1SS133T Download
Manufacturer	AiT Semiconductor
Description	SILICON EPITAXIAL PLANAR SWITCHING DIODE
Buy	Stock & Price

DESCRIPTION

FEATURE 1SS133_1SS133T DIODE SILICON EPITAXIAL PLANAR SWITCHING DIODE

ABSOLUTE MAXIMUM RATINGS

Ta = 25°C, unless otherwise specified. VRM, Peak Reverse Voltage 90 V VR, DC Reverse Voltage 80 V IF(AV), Average Rectified Forward Current 130 mA IFM, Peak Forward Current 400 mA IFSM, Surge Forward Current at t < 1 s 600 mA Ptot, Power Dissipation 300 mW Tj, Junction Temperature 175 ℃ TSTG, Storage Temperature Range - 65 ~ + 175 ℃ Stresses above may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Ta = 25°C, unless otherwise specified. Parameter Forward Voltage Reverse Current Capacitance between Terminals Reverse Recovery Time Symbol VF IR CT trr Conditions IF = 100 mA VR = 80 V VR = 0.5 V, f = MHz IF = 10 mA, VR = 6 V, RL = 50 Ω Max. Unit 1.2 V 0.5 μA 2 pF 4 ns REV1.0 - DEC 2024 RELEASED - -2- AiT Semiconductor Inc. 1SS133_1SS133T DIODE SILICON EPITAXIAL PLANAR SWITCHING DIODE TYPICAL CHARACTERISTICS Fig 1.