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2SD1664R Datasheet PDF

AiT Semiconductor 2SD1664R

The 2SD1664 is available in SOT-89 Package.
Part No. 2SD1664R
Datasheet 2SD1664R Download
Manufacturer
AiT Semiconductor
Description NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR
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2SD1664R datasheet page 1 preview

DESCRIPTION

The 2SD1664 is available in SOT-89 Package.

FEATURES

● Available in SOT-89 Package. ORDERING INFORMATION Package Type Part Number 2SD1664P SOT-89 2SD1664Q 2SD1664R Note SPQ: 1,000pcs/Reel AiT provides all RoHS Compliant Products PIN

DESCRIPTION

1. Base 2. Collector 3. Emitter REV1.1 - MAR 2015 RELEASED, JUN 2019 UPDATED - -1- AiT Semiconductor Inc. 2SD1664 GENERAL PURPOSE TRANSISTOR NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

TA=25°C VCBO, Collector Base Voltage 40V VCEO, Collector Emitter Voltage 32V VEBO, Emitter Base Voltage 5V IC, Collector Current - DC 1A ICP, Collector Current - PulseNOTE1 2A Ptot, Total Power Dissipation 0.5W 2WNOTE2 TJ, Junction Temperature 150°C TSTG, Storage Temperature Range -55°C ~150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the

ELECTRICAL CHARACTERISTICS

are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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