AiT Semiconductor AH8113
The AH8113 is an integrated hall-effect sensor Micro power design designed specifically to meet the requirements of 1.65 V to 5.5 V battery operation low-power devices.DESCRIPTION
FEATURES
The AH8113 is an integrated hall-effect sensor● Micro power design designed specifically to meet the requirements of
● 1.65 V to 5.5 V battery operation low-power devices. e.g. as an On/Off switch in
● High sensitivity and high stability of the Cellular Flip-Phones, with battery operating voltages magnetic switching points of 1.65V-5.5V.
● High resistance to mechanical stress Precise magnetic switching points and high
● Digital output signal temperature stability are achieved through the unique
● Switching for both poles of a magnet design of the internal circuit. An onboard clock (omnipolar) scheme is used to reduce the average operating
● Not suitable for automotive application current of the IC. During the operate phase the IC
● Available in TSOT-23 and TO-92S Packages compares the actual magnetic field detected with the internally compensated switching points. The output Voltage is switched at the end of each operating phase. During the Stand-by phase the outp...