Datasheet4U.com

AH8113 Datasheet PDF

AiT Semiconductor AH8113

The AH8113 is an integrated hall-effect sensor Micro power design designed specifically to meet the requirements of 1.65 V to 5.5 V battery operation low-power devices.
Part No. AH8113
Datasheet AH8113 Download
Manufacturer
AiT Semiconductor
Description CMOS HALL SWITCH
Buy Stock & Price
AH8113 datasheet page 1 preview

DESCRIPTION

FEATURES

The AH8113 is an integrated hall-effect sensor
● Micro power design designed specifically to meet the requirements of
● 1.65 V to 5.5 V battery operation low-power devices. e.g. as an On/Off switch in
● High sensitivity and high stability of the Cellular Flip-Phones, with battery operating voltages magnetic switching points of 1.65V-5.5V.
● High resistance to mechanical stress Precise magnetic switching points and high
● Digital output signal temperature stability are achieved through the unique
● Switching for both poles of a magnet design of the internal circuit. An onboard clock (omnipolar) scheme is used to reduce the average operating
● Not suitable for automotive application current of the IC. During the operate phase the IC
● Available in TSOT-23 and TO-92S Packages compares the actual magnetic field detected with the internally compensated switching points. The output Voltage is switched at the end of each operating phase. During the Stand-by phase the outp...
AH8113 page 2 preview AH8113 page 3 preview