AiT Semiconductor AM2300
The AM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.DESCRIPTION
FEATURES
Advanced trench technology to provide excellent RDS(ON).● 20V/4.0A, RDS(ON) =26mΩ(typ.)@VGS =4.5V
● 20V/3.0A, RDS(ON) =31mΩ(typ.)@VGS =2.5V
● 20V/2.0A, RDS(ON) =44mΩ(typ.)@VGS =1.8V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and Maximum DC current capability
● Available in SOT-23 Package APPLICATION AM2300 is available in SOT-23 packages. ORDER INFORMATION
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter Package Type Part Number SOT-23 AM2300E3R E3 AM2300E3VR Note V: Green Package R : Tape & Reel AiT provides all Pb free products Suffix “ V “ means Green Package PIN CONFIGURATION REV1.0 - JUN 2010 RELEASED - -1- AiT Semiconductor Inc. PIN
DESCRIPTION
AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE Pin # 1 2 3 Symbol G S D Top View Function Gate Source Drain REV1.0 - JUN 2010 RELEASED - -2- AiT Semiconductor Inc. AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE ABSOLUTE MAXIMUM RATI...