AiT Semiconductor AM2301E
The AM2301E is available in SOT-23 Package. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied.| Part No. | AM2301E |
|---|---|
| Datasheet | AM2301E Download |
| Manufacturer |  AiT Semiconductor |
| Description | -20V -2A P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The AM2301E is available in SOT-23 Package. VDSS RDSON ID -20V 95mΩ -2AAPPLICATIONS
● Load Switch● PWM Application
● Power Management FEATURE
● -20V, -2A
● RDS(ON) Typ.= 95mΩ @ VGS =-4.5V
● RDS(ON) Typ.= 125mΩ @ VGS =-2.5V
● Advanced Trench Technology
● Excellent RDS(ON) and Low Gate Charge PIN
DESCRIPTION
ORDERING INFORMATION Package Type Part Number SOT-23 E3 AM2301E3R SPQ: 3,000pcs/Reel Note R: Tape & Reel AiT provides all RoHS products Pin # 1 2 3 Symbol G S D Function Gate Source DrainABSOLUTE MAXIMUM RATINGS
TJ = 25°C, unless otherwise specified. VDS, Drain-to-Source Voltage -20V VGS, Gate-to-Source Voltage ±12V ID, Continuous Drain Current TA = 25°C TA = 100°C -2A -1.3A IDM, Pulsed Drain Current (1) -8A PD, Power Dissipation TA = 25°C 0.8W RθJA, Thermal Resistance, Junction-to-Ambient (2) 156℃/W TSTG, Storage Temperature Range -55℃ ~ +150℃ TJ, Junction Temperature Range -55℃ ~ +150℃ Stresses above may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
