AiT Semiconductor AM8958
The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low inline power loss and resistance to transient are needed.| Part No. | AM8958 |
|---|---|
| Datasheet | AM8958 Download |
| Manufacturer |  AiT Semiconductor |
| Description | N+P PAIR ENHANCEMENT MODE MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
The AM8958 is available in SOP8 Package N-Channel● 30V /6.8A, RDS(ON) = 23mΩ(typ.)@VGS = 10V
● 30V /6.5A, RDS(ON) = 34mΩ(typ.)@VGS = 4.5V P-Channel
● -30V / -6.5A, RDS(ON) = 35mΩ(typ.)@VGS = -10V
● -30V / -4.4A, RDS(ON) = 60mΩ(typ.)@VGS = -4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and Maximum DC current capability
● Available in SOP8 Package APPLICATION ORDERING INFORMATION Package Type Part Number SOP-8 AM8958M8R M8 AM8958M8VR Note R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package
● Power Management in Note book
● Portable Equipment
● Battery Powered System P-CHANNEL MOSFET N-Channle P-Channle REV1.0 - JUL 2010 RELEASED – -1- AiT Semiconductor Inc. PIN
DESCRIPTION
AM8958 MOSFET N+P PAIR ENHANCEMENT MODE Pin # 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Top View Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1 Function REV1.0 - JUL 2010 RELEASED – -2- AiT Semiconductor Inc.
