MMBT2222W Datasheet PDF | AiT Semiconductor

AiT Semiconductor MMBT2222W

The MMBT2222W & MMBT2222AW are available in For Switching and amplifier applications SOT-323 package. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied.

Part No.	MMBT2222W
Datasheet	MMBT2222W Download
Manufacturer	AiT Semiconductor
Description	NPN SILICON EPITAXIAL PLANAR TRANSISTOR
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DESCRIPTION

APPLICATION PIN

DESCRIPTION

ORDERING INFORMATION Package Type Part Number SOT-323 MMBT2222W MMBT2222AW SPQ 3,000pcs/Reel AiT provides all RoHS Compliant Products PIN# 1 2 3 SOT-323

DESCRIPTION

Base Emitter Collector

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise specified. VCBO, Collector Base Voltage Parameter MMBT2222W MMBT2222AW Value 60V 75V MMBT2222W 30V VCEO, Collector Emitter Voltage MMBT2222AW 40V VEBO, Emitter Base Voltage MMBT2222W 5V MMBT2222AW 6V IC, Collector Current Ptot, Total Power Dissipation 600mA (1) 460mW (2) 200mW TJ, Junction Temperature 150°C Tstg, Storage Temperature Range -55°C ~ +150°C (1) RθJA, Thermal Resistance from Junction to Ambient (1) (2) 270°C/W 625°C/W Stresses above may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. (2) Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

MMBT2222W Datasheets by Manufacturer

2 datasheets

Part Number	Manufacturer
MMBT2222W	Semtech Corporation
MMBT2222W	CHINA BASE