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WSI04012J Datasheet PDF

AiT Semiconductor WSI04012J

WIRE WOUND SMD INDUCTOR

Part No. WSI04012J
Datasheet WSI04012J Download
Manufacturer
AiT Semiconductor
Description WIRE WOUND SMD INDUCTOR
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WSI04012J datasheet page 1 preview

ELECTRICAL CHARACTERISTICS

Part Number Inductance (uH) DCR (mΩ) Typ. WSI04012J-R22M 0.22 7.80 WSI04012J-R47M 0.47 16.50 WSI04012J-R56M 0.56 22.00 WSI04012J-R68M 0.68 18.80 WSI04012J-1R0M 1.00 28.30 WSI04012J-1R2M 1.20 41.00 WSI04012J-1R5M 1.50 45.00 * Test Condition: @100KHz, 1.0Vrms, 25℃ Ambient * M=Tolerance=±20% * Irms: Rated Current Loading when temperature rise approximately 40℃. * Isat: Saturated Current measured at the point of L drop approximately 20% Part Number Inductance (uH) DCR (mΩ) Typ. WSI04012M-R33M 0.33 17.00 WSI04012M-R47M 0.47 19.00 WSI04012M-1R0M 1.00 43.00 WSI04012M-1R5M 1.50 68.00 WSI04012M-2R2M 2.20 79.40 * Test Condition: @100KHz, 1.0Vrms, 25℃ Ambient * M=Tolerance=±20% * Irms: Rated Current Loading when temperature rise approximately 40℃. * Isat: Saturated Current measured at the point of L drop approximately 20% Part Number Inductance (uH) DCR (mΩ) Typ. WSI04015J-R22M 0.22 6.40 WSI04015J-R47M 0.47 12.00 WSI04015J-1R0M 1.00 23.50 WSI04015J-1R2M 1.20 28.30 WSI04...
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