AiT Semiconductor WSL252012
WIRE WOUND SMD INDUCTOR
| Part No. | WSL252012 |
|---|---|
| Datasheet | WSL252012 Download |
| Manufacturer |  AiT Semiconductor |
| Description | WIRE WOUND SMD INDUCTOR |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Part Number Inductance (uH) D.C.R (m Ω) Typ. Max. WSL201610-R24M 0.24 18.0 20.5 WSL201610-R33M 0.33 21.0 26.0 WSL201610-R47M 0.47 28.0 32.0 WSL201610-R56M 0.56 31.0 37.2 WSL201610-R68M 0.68 44.0 50.0 WSL201610-1R0M 1.00 49.0 59.0 WSL201610-1R5M 1.50 80.0 96.0 WSL201610-2R2M 2.20 130.0 150.0 * Test Condition @100KHz, 1.0Vrms, 25℃ Ambient * M=Tolerance=±20% * Irms: Rated Current Loading when temperature rise approximately 40℃ * Isat: Saturated Current measured at the point of L drop approximately 30% Isat (A) Typ. Max. 7.7 6.7 7.0 6.2 6.0 5.3 5.2 4.6 5.0 4.4 4.4 3.8 3.0 2.7 2.65 2.45 Irms (A) Typ. Max. 6.5 5.5 5.7 5.2 5.3 4.7 4.6 4.0 4.0 3.4 3.6 3.2 2.6 2.3 2.3 2.0 Part Number Inductance (uH) D.C.R (m Ω) Typ. Max. WSL201612-R22M 0.22 10.0 13.0 WSL201612-R33M 0.33 15.0 18.0 WSL201612-R47M 0.47 20.0 26.0 WSL201612-R68M 0.68 30.0 36.0 WSL201612-1R0M 1.00 40.0 48.0 WSL201612-1R5M 1.50 70.0 84.0 WSL201612-2R2M 2.20 105.0 126.0 * Test Condition @100KHz, 1.0Vrms, 25℃...
