Datasheet4U.com

A92H331 Datasheet PDF

ALJ A92H331

PNP Transistor

Part No. A92H331
Datasheet A92H331 Download
Manufacturer
ALJ
Description PNP Transistor
Buy Stock & Price
A92H331 datasheet page 1 preview

FEATURES

● High voltage

MAXIMUM RATINGS

(Ta=25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector Base Voltage -310 V VCEO Collector Emitter Voltage -305 V VEBO Emitter Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current –Pulsed -500 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 °C Tstg Storage Temperature -55~150 °C RθJA Thermal Resistance, Junction - Ambient 200 °C/mW RθJC Thermal Resistance, Junction - Case 83.3 °C/mW 1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS

(Ta=25°C unless otherwise specified) Symbol Parameter Test Conditions V(BR)CBO Collector-base breakdown voltage IC = -100µA,IE = 0 V(BR)CEO Collector-emitter breakdown voltage IC = -1mA,IB = 0 V(BR)EBO Emitter-base breakdown voltage IE = -100µA,IC = 0 ICBO Collector cut-off current VCB = -200V,IE = 0 IEBO Emitter cut-off current VEB = -5V,IC = 0 hFE(1) VCE = -5V, IC = -1mA hFE(2) VCE = -5V, IC = -10mA hFE(3) DC current gain VCE = -10V, IC = -...
A92H331 page 2 preview