ALLPOWER AP8205
N-channel Double MOSFET
FEATURES
采用先进的沟槽技术,提供较小的导通电阻 RDS(on),低栅极电荷,栅极工作电压低至 2.5V。 advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltages as low as 2.5V. 用途 /APPLICATIONS
适用于电池保护电路,开关电路。 Use as a Battery protection , Switching application. 内部等效电路 / Equivalent Circuit **** 引脚排列 / Pinning 1 2 3 6 5 4 印章代码 / Marking Marking 8205 1/6 AP8205 Rev.D Nov.-2016 极限参数 /ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) 参数 Parameter Drain-Source Voltage Drain Current - Continuous Drain Current - Continuous Drain Current – Pulsed Gate-Source Voltage Maximum Power Dissipation Thermal Resistance Junction-to-Ambient Junction Temperature Storage Temperature Range 符号 S