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APG005N03D7 - N-Channel Enhancement Mosfet

Key Features

  • 30V,300A RDS（ON）.

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Datasheet Details

Part number APG005N03D7
Manufacturer ALLPOWER
File Size 1.00 MB
Description N-Channel Enhancement Mosfet
Datasheet download datasheet APG005N03D7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APG005N03D7 N-Channel Enhancement Mosfet Features ⚫ 30V,300A RDS（ON）<0.48mΩ＠VGS=10V TYP:0.4mΩ RDS（ON）<1.1mΩ＠VGS=4.5V TYP:0.84mΩ ⚫ Surface-mounted package ⚫ Advanced trench cell design Applications ⚫ High power inverter system ⚫ LCD TV appliances ⚫ LCDM appliances Package Marking and Ordering Information Device Marking Device Device Package G005N03D7 APG005N03D7 TO-263-7 Reel Size - 4 123 567 TO-263-7 Tape width - Quantity (PCS) 800 ABSOLUTE MAXIMUM RATINGS (TJ=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Tc=25℃) (1,3) Continuous Drain Current (Tc=100℃) (1,3) Pulsed Drain Current (1,2,3) Single Pulsed Avalanche Energy (Tc=25℃,L=1.