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APG005N03D7
N-Channel Enhancement Mosfet
Features
⚫ 30V,300A RDS(ON)<0.48mΩ@VGS=10V TYP:0.4mΩ RDS(ON)<1.1mΩ@VGS=4.5V TYP:0.84mΩ
⚫ Surface-mounted package ⚫ Advanced trench cell design
Applications
⚫ High power inverter system ⚫ LCD TV appliances ⚫ LCDM appliances
Package Marking and Ordering Information
Device Marking
Device
Device Package
G005N03D7 APG005N03D7
TO-263-7
Reel Size -
4
123 567 TO-263-7
Tape width -
Quantity (PCS) 800
ABSOLUTE MAXIMUM RATINGS (TJ=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Tc=25℃) (1,3) Continuous Drain Current (Tc=100℃) (1,3)
Pulsed Drain Current (1,2,3)
Single Pulsed Avalanche Energy (Tc=25℃,L=1.