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AM29LV081B - 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory

General Description

The Am29LV081B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes.

The device is offered in a 40-pin TSOP package.

DQ0.

This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations.

Key Features

  • of the Am29LV081, which was manufactured using 0 . 5 µ m p r o c e s s t e c h n o l o gy. I n a d d i t i o n , t h e Am29LV081B features unlock bypass programming and in-system sector protection/unprotection. The standard device offers access times of 70, 80, 90, and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a sin.

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Datasheet Details

Part number AM29LV081B
Manufacturer AMD
File Size 39.56 KB
Description 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
Datasheet download datasheet AM29LV081B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION Am29LV081B 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s Optimized architecture for Miniature Card and mass storage applications s Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors s Manufactured on 0.35 µm process technology — Compatible with 0.