AM41PDS3224D Datasheet | AMD

Features - Power supply voltage of 1.8 to 2.2 volt - High performance - Access time as fast as 100 ns flash, 70 ns SRAM - - - - 24 m A active read current at 10 MHz for initial page read 0.5 m A active read current at 10 MHz for intra-page read 1 m A active read current at 20 MHz for intra-page read 200 n A in standby or automatic sleep mode - Package - 73-Ball FBGA - Minimum 1 million write cycles guaranteed per sector - 20 year data retention at 125°C - Reliable operation for the life of the system - Operating Temperature - - 40°C to +85°C SOFTWARE FEATURES - Data Management Software (DMS) - AMD-supplied software manages data programming, enabling EEPROM emulation - Eases historical sector erase flash limitations Flash Memory Features ARCHITECTURAL ADVANTAGES - Simultaneous Read/Write operations - Data can be continuously read from one bank while executing erase/program functions in other bank. - Zero latency between read and write operations - Erase Suspend/Erase Resume - Data# Polling and Toggle Bits - Unlock Bypass Program mand - Reduces overall programming time when issuing multiple program mand sequences - Page Mode Operation - 4 word page allows fast asynchronous reads - Dual Bank architecture - One 4 Mbit bank and one 28 Mbit bank HARDWARE FEATURES - Any bination of sectors can be erased - Ready/Busy# output (RY/BY#) - Hardware reset pin (RESET#) - WP#/ACC input pin - Write protect (WP#) function allows protection of two outermost boot sectors, regardless of sector protect status - Acceleration (ACC) function accelerates program timing - Sec Si (Secured...