Am29F400T Datasheet | AMD

DESCRIPTION The Am29F400 is a 4 Mbit, 5.0 V-only Flash memory organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The Am29F400 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 V Vcc supply. A 12.0 V Vpp is not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The Am29F400 is erased when shipped from the factory. The standard Am29F400 offers access times between 70 ns and 150 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus - Embedded Program Algorithms - Automatically writes and verifies data at specified address - Data Polling and Toggle Bit feature for detection of program or erase cycle pletion - Low power consumption - 20 m A typical active read current for Byte Mode - 28 m A typical active read current for Word Mode - 30 m A typical write/erase current - 25 IJA typical standby current - Low Vcc write inhibit:'> 3.2 V - Sector protection - Hardware method disables any bination of sectors from write or erase operations - Erase Suspend/Resume - Suspends the erase operation to allow a read in another sector within the same device - Boot Code Sector Architecture - T = Top sector - B = Bottom sector contention the device has separate c~ enable (GE), write enable (WE) and output enable (OE) controls. The Am29 F400 is pin and mand set patible with JEDEC standard 4 Mbit E2p ROMs. mands are written to the mand register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 V Flash or EPROM devices. Family Part No: Ordering Part No: Vcc = 5.0 V ± 5% -75 Vcc = 5.0 V ± 10% Max Access Time (ns) CE (E) Access...