DS42514 Overview
DS42514 Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am29DL163D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE.
DS42514 Key Features
- 85 ns maximum access time
- AMD-supplied software manages data programming and erasing, enabling EEPROM emulation
- Eases sector erase limitations
- 69-Ball FBGA
- Suspends erase operations to allow programming in same bank
- 25°C to +85°C
- Data can be continuously read from one bank while executing erase/program functions in other bank
- Zero latency between read and write operations
- Provides a software method of detecting the status of program or erase cycles
- Reduces overall programming time when issuing multiple program mand sequences