AMD MB84SF6H6H6L2-70
FLASH MEMORY
| Part No. | MB84SF6H6H6L2-70 |
|---|---|
| Datasheet | MB84SF6H6H6L2-70 Download |
| Manufacturer |  AMD |
| Description | FLASH MEMORY |
| Buy | Stock & Price |
FEATURES
● Power supply voltage Flash _1 & 2: VCCf = 1.65 V to 1.95 V FCARM: VCCr = 2.5 V to 3.1 V, VCCQr = 1.65 V to 1.95 V● High performance 11 ns maximum Burst read access time, 56 ns maximum random access time (Flash_1 & Flash_2) 11 ns maximum Burst read access time, 70 ns maximum random access time (FCRAMTM) (Continued) Flash_1 & Flash_2 Supply Voltage (V) I/O Supply Voltage (V) Max Latency Time (ns) Synchronous/ Max Burst Access Time (ns) Burst Max OE Access Time (ns) Max Address Access Time (ns) Max CE Access Time (ns) Asynchronous Max OE Access Time (ns) Max Page Access Time (ns) VCCf_1 & 2* = 1.8 V +0.15V –0.15V s PRODUCT LINEUP FCRAM VCCr* = 3.0 V +0.10V –0.50V VCCQr = 1.65 V to 1.95 V 71 11 11 56 56 11 — VCCQr = 1.65 V to 1.95 V — 11 — 70 70 40 20 *: All of VCCf_1, VCCf_2 and VCCr must be the same level when either part is being accessed. s PACKAGE 115-ball plastic FBGA BGA-115P-M03 MB84SF6H6H6L2-70
● Operating Temperature –30 °C to +85 °C
● Package 115-ball BGA — FLASH MEM...
