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N04Q1618C2B Datasheet 4mb Ultra-low Power Asynchronous CMOS Sram

Manufacturer: AMI SEMICONDUCTOR

Datasheet Details

Part number N04Q1618C2B
Manufacturer AMI SEMICONDUCTOR
File Size 328.02 KB
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet N04Q1618C2B_AMISEMICONDUCTOR.pdf

N04Q1618C2B Overview

AMI Semiconductor, Inc. Advance Information .. 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview AMI Semiconductor, Inc. Pin Configurations (4Mb) Advance Information

N04Q1618C2B Key Features

  • Multiple Power Supply Ranges 1.1V
  • 1.3V 1.65V
  • Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ
  • Very low standby current 50nA typical for 1.2V operation
  • Very low operating current 400µA typical for 1.2V operation at 1µs
  • Very low Page Mode operating current 80µA typical for 1.2V operation at 1µs
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for
  • Automatic power down to standby mode
  • BGA, TSOP and KGD options
  • RoHS pliant

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