AMI SEMICONDUCTOR N04Q1618C2B
The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide ultra-low active and standby power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.| Part No. | N04Q1618C2B |
|---|---|
| Datasheet | N04Q1618C2B Download |
| Manufacturer |  AMI SEMICONDUCTOR |
| Description | 4Mb Ultra-Low Power Asynchronous CMOS SRAM |
| Buy | Stock & Price |
FEATURES
● Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V● Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ
● Very low standby current 50nA typical for 1.2V operation
● Very low operating current 400µA typical for 1.2V operation at 1µs
● Very low Page Mode operating current 80µA typical for 1.2V operation at 1µs
● Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion
● Automatic power down to standby mode
● BGA, TSOP and KGD options
● RoHS Compliant Product Options Part Number N04Q1612C2Bx-15C1 N04Q1618C2Bx-15C1 N04Q1618C2Bx-70C N04Q1618C2Bx-85C Typical Standby Current 50nA 50nA 200nA 200nA 1.8 1.8, 3.0 Vcc (V) 1.2 VccQ (V) 1.2, 1.8, 3.0 Speed (nS) 150ns 150ns 70ns 85ns Typical Operating Operating Current Temperature 0.4 mA @ 1MHz 0.4 mA @ 1MHz 0.6 mA @ 1MHz 0.6 mA @ 1MHz 0oC to +70oC 1. Part numbers are under development. Please contact your local sales representative for details.
