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N08M1618L1A Datasheet PDF

AMI SEMICONDUCTOR N08M1618L1A

The N08M1618L1A is an integrated memory device intended for non life-support medical applications. This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology with reliability inhancements for medical users.
Part No. N08M1618L1A
Datasheet N08M1618L1A Download
Manufacturer
AMI SEMICONDUCTOR
Description 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K X 16 bit
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N08M1618L1A datasheet page 1 preview

FEATURES

● Dual voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.4 to 2.2 Volts
● Very low standby current 0.5µA at 1.8V and 37 deg C
● Very low operating current 1.0mA at 1.8V and 1µs (Typical)
● Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)
● Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion
● Low voltage data retention Vcc = 1.2V
● Special Processing to reduce Soft Error Rate (SER)
● Automatic power down to standby mode Product Family Part Number Package Type Operating Temperature Power Supply Speed Standby Operating Current (ISB), Current (Icc), Max Max N08M1618L1AB 48 - BGA 2.3V-3.6V(VCCQ) 85ns @ 1.7V -40oC to +85oC 1.4V-2.2V(V ) 150ns @ 1.4V CC 20 µA 2.5 mA @ 1MHz N08M1618L1AW Wafer Pin Configuration 1 A B C D E F G H LB I/O8 I/O9 VSS Pin Descriptions 3 A0 A3 A5 A17 NC A14 A12 A9 2 OE UB I/O10 I/O11 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/...
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