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A426316B - 64K X 16 CMOS DYNAMIC RAM

General Description

Symbol VCC I/O0 I/O 1 I/O 2 I/O 3 VCC I/O 4 I/O 5 I/O 6 I/O 7 NC NC WE RAS NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 VSS I/O 15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE NC A7 A6 A5 A4 VSS VCC

Key Features

  • n Organization: 65,536 words X 16 bits n Part Identification: - A426316B - A426316B-L (with self-refresh mode) n High speed - 30/35/40 ns RAS access time - 16/18/20 ns column address access time - 10/11/12 ns CAS access time n Low power consumption - Operating: 75mA (-30 max) - Standby: 3 mA (TTL) Separate CAS ( UCAS , LCAS ) for byte selection Self refresh mode 256 refresh cycles, 4 ms refresh interval Read-modify-write, RAS -only, CAS -before- RAS , Hidden refresh capability n TTL-compatible,.

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Datasheet Details

Part number A426316B
Manufacturer AMIC Technology
File Size 419.76 KB
Description 64K X 16 CMOS DYNAMIC RAM
Datasheet download datasheet A426316B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A426316B Series Preliminary Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE History Initial issue Issue Date November 15, 2000 Remark Preliminary PRELIMINARY (November, 2000, Version 0.0) AMIC Technology, Inc.