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A61L6316 Series
64K X 16 BIT HIGH SPEED CMOS SRAM
Document Title 64K X 16 BIT HIGH SPEED CMOS SRAM
Revision History
Rev. No. 0.0 1.0
1.1
History Initial issue Final spec. release Add -10 spec. Change ICC1 from 120mA to 220mA (-12) Change ICC1 from 100mA to 210mA (-15) Change ISB1 from 8mA to 12mA Change ICDR from 1mA to 5mA Add tBE, tBLZ, tBHZ, tBW parameters Add -25°C ~ +85°C grade
Issue Date July 14, 2000 May 8, 2001
Remark Preliminary Final
July 17, 2002
(July, 2002, Version 1.1)
AMIC Technology, Inc.
A61L6316 Series
64K X 16 BIT HIGH SPEED CMOS SRAM
Features
General Description
n Center power pinout n Supply voltage: -10: 3.3V+10%, -5%
-12, -15: 3.3V±10% n Access times: 10/12/15 ns (max.) n Current: Operating: -10: 230mA (max)
-12: 220mA (max.)
-15: 210mA (max.