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AWT6102M2 Datasheet Egsm/dcs/pcs Triple Band Power Amplifier Module

Manufacturer: ANADIGICS Inc

Overview: AWT6102M2 EGSM/DCS/PCS Triple Band Power Amplifier Module Advanced Product Information Rev.

Datasheet Details

Part number AWT6102M2
Manufacturer ANADIGICS Inc
File Size 242.99 KB
Description EGSM/DCS/PCS Triple Band Power Amplifier Module
Datasheet AWT6102M2_ANADIGICSInc.pdf

General Description

The AWT6102 is a 3.5V power amplifier module for use in dual Mode GSM/DCS/PCS wireless handsets and munication systems.

Absolute Minimum and Maximum Ratings SIGNAL Supply Voltage (Vcc ) Input Power (RF IN) Control Voltage (V APC ) Storage Temperature (TSTG ) Operating Temperature (TC) -55 -25 MIN MAX +7 +15 + 4.3V 150 85 UNITS V dBm V °C °C AWT6102M2 Electrical Specifications EGSM: (Unless otherwise specified: Vcc = 3.2V, Z = Z =50Ω System, TC = 25 °C, pulsed operation with 577µsec pulse width and 12.5% duty cycle) PARAMETER Frequency Supply Voltage Control Voltage Range Power Control Current Input Power Output Power Power Added Efficiency Degraded Output Power VC C =2.9 V, VAPC = 2.4V, PIN = 8dBm, TC= 85 °C Isolation VA P C = 0.2V, PIN = 10 dBm Harmonics (1) 2 nd 3 rd 3fo to 12.750 GHz Stability: Load 8:1 VSWR All phase angles Ruggedness: PIN = 12 dBm, VS U P=4.5V, VAPC= 0.2 - 2.8V Leakage Current VA P C=0V, VC C = 4.5V No input power Noise Power 925 to 935 MHz 935 to 960 MHz Switching Time VA P C on to 90% detected POUT Input VSWR Output VSWR 10 IN OUT SYMBOL fo VCC VAPC IA P C P IN POUT PAE MIN 880 2.9 0.2 TYP 3.2 2.0 MAX 915 4.5 2.7 1 UNITS MHz V V mA dBm dBm % dBm 8 10 34.5 12 - 50 32 55 -25 - -35 -12 -15 -7 -7 -7 -70 10:1 VSWR All Phases - dBm dBm dBm dBm dBc - - µ A -72 -84 2 2:1 2:1 dBm/100 KHz dBm/100 KHz µsec 2 AWT6102M2 Electrical Specifications DCS/PCS: (Unless otherwise specified: Vcc = 3.2V, Z = Z =

Key Features

  • InGaP HBT Technology High Efficiency 55% GSM High Efficiency 50% DCS High Efficiency 45% PCS Low Leakage Current (.

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