AWL6950 Datasheet | ANADIGICS

FEATURES - - - - - - - - - - - - 3.6 % EVM @ POUT = +19 d Bm with IEEE 802.11a 64 QAM OFDM at 54 Mbps 2.7 % EVM @ POUT = +20 d Bm with IEEE 802.11g 64 QAM OFDM at 54 Mbps -35 d Br ACPR 1st Sidelobe, +22 d Bm, with 802.11b CCK/DSSS Root Cosine Filtering, 1 Mbps -55 d Br ACPR 2nd Sidelobe, +22 d Bm, with 802.11b CCK/DSSS Root Cosine Filtering, 1 Mbps 32 d B of Linear Power Gain at 2.4 GHz 32 d B of Linear Power Gain at 5 GHz Single +3.3 V Supply Dual Temperature-pensated Linear Power Detectors 50 Ω - Matched RF Ports Lead-free and Ro HS pliant 1 k V ESD Rating (HBM) 4 mm x 4 mm x 1.3 mm Surface Mount Module AW L6 .. M21 Package 16 Pin 4 mm x 4 mm x 1.3 mm Surface Mount Module APPLICATIONS - 802.11a/b/g/n WLAN PRODUCT DESCRIPTION The ANADIGICS AWL6950 dual band power amplifier is a high performance In Ga P HBT power amplifier module designed for transmit applications in the 2.4-2.5 GHz and 4.9-5.9 GHz bands. Matched to 50 Ω at all RF inputs and outputs, the part requires no additional RF matching ponents off-chip, making the AWL6950 the world’s simplest dual band PA module implementation available. The PA exhibits unparalleled linearity and efficiency for IEEE 802.11g, 802.11b, and 802.11a WLAN systems under the toughest signal configurations within these standards. The power detectors are temperature pensated on chip, enabling separate single-ended output voltages for each band with excellent accuracy over a wide range of operating temperatures. The PA is biased by a single +3.3 V supply and consumes ultra-low current in the OFF mode. The AWL6950 is manufactured using advanced In Ga P HBT technology that offers state-of-the-art reliability, temperature stability, and ruggedness. GND VPC VCC 2.4 GHz Power Detector Bias Control 2.4 GHz RFIN Matching Network Matching Network 2.4 GHz RFOUT 5 GHz RFIN Matching Network Matching Network 5 GHz RFOUT Bias Control 5 GHz Power Detector Figure 1: Block Diagram and Pinout 04/2006 AWL6950 Table 1: Pin...