PD100
PD100 is InGaAs Photodiode manufactured by ANADIGICS.
FEATURES
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- Planar Structure High Responsivity Low Dark Current Dielectric Passivation 100% Purge Burn-in PD100-003-0xx Ceramic Sub-Mount PD100-003-1xx TO can Package
APPLICATIONS ..
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- Optical munication Systems Test and Measurement Sensing PD100-003-3xx SC/APC Pigtail PD100-003-5xx FC Receptacle
PRODUCT DESCRIPTION
The PD100 is an In Ga As photodiode with a photosensitive region 100μm in diameter. It is intended for use in high speed, low noise munication systems (up to 1.5Gb/s data rates) as well as applications in test and measurement and other optical power sensing devices. The large active area allows the use of multimode fiber. Reliability is assured by hermetic sealing and 100% purge burn-in (200°C, 15 hours, Vr = 20V). The device can be assembled on a ceramic submount or in a TO can. It can be pigtailed with SC, FC or ST connectors (UPC or APC). It can also be mounted in an SC, ST of FC receptacle. Custom packages are an option.
ELECTRICAL CHARACTERISTICS
Table 1: Electrical Specifications
PARAMETER Dark Current (ID) Capacitance (Ceramic sub-mount) (1) Capacitance (Receptacle, Pigtail, TO can) (1) Responsivity at 1310nm (Ceramic sub-mount) Responsivity at 1550nm (Ceramic sub-mount) Responsivity at 1310nm (Receptacle, Pigtail, TO can) Responsivity at 1550nm (Receptacle, Pigtail, TO can) 3d B bandwidth (50Ω) (Ceramic sub-mount) (1) 3d B bandwidth (50Ω) (Receptacle, Pigtail, TO can) (1) Optical Return Loss (Pigtail using SMF-28) Optical Return Loss (Receptacle, APC connector) Operating voltage (1) 5V bias voltage MIN 0.80 0.85 0.80 0.85 2400 2000 50 40 TYP 0.2 1.0 1.2 0.90 0.95 0.85 0.90 2700 2200 55 45 5 MAX 2.0 1.1 1.3 20 UNIT n A p F p F A/W A/W A/W A/W MHz MHz d B d B V
Table 2: Absolute Maximum Ratings
PARAMETER Forward Current Reverse Current Reverse Voltage Optical input power Operating Case Temperature Storage Temperature Soldering temperature (10 seconds) MIN -40 -40 MAX 5 500 30 5 +85 +85 +250 UNIT m A μA V m W ºC ºC ºC
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