APM2601 Datasheet PDF

FEATURES

● -20V/-3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=110mΩ(typ.) @ VGS=-2.5V Pin

DESCRIPTION

D D G 1 2 3 6 5 4 D D S
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● Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23-6 Package Top View of SOT-23-6 S

APPLICATIONS

● G Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. D D D D Ordering and Marking Information A P M 26 01 H andling C ode T em p. R an ge Package Code P-Channel MOSFET Package Code C : S O T -23-6 O peration Junction T em p. R ange C : -55 to 1 50° C H andling C ode T R : T ape & R eel A P M 2601 C : M 01X X - D ate C ode

ABSOLUTE MAXIMUM RATINGS

Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating -20 ±8 -3 -10 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.