Anpec Electronics APM4429
P-Channel MOSFET
FEATURES
● -30V/-13A, RDS(ON) = 8mΩ(typ.) @ VGS = -20V RDS(ON) = 9mΩ(typ.) @ VGS = -10V RDS(ON) =13mΩ(typ.) @ VGS = -4.5V● Pin
DESCRIPTION
5 5 5 & % , , , , ! " $ # Super High Density Cell Design Reliable and Rugged SO-8 Package /●
● SO − 8 S S S
APPLICATIONS
● Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G Ordering and Marking Information APM 4429 L e a d F re e C o d e H a n d lin g C o d e Tem p. R ange P ackage C ode D D D D P-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 °C H a n d lin g C o d e TU : Tube TR : Tape & Reel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n d : O rg in a l D e v ic e X X X X X - D a te C o d e APM 4429 K : APM 4429 XXXXXABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGSS ID * (TA = 25°C unless otherwise noted) Rating -30 ±20 TA = 25°C -13 -50 Unit V A Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous Maximum Drain Current Pulsed IDM * Surface Mounted on FR4 Board, t ≤ 10 sec.