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APM9430
N-Channel Enhancement Mode MOSFET
Features
• • • •
20V/4A, RDS(ON) = 40mΩ(typ.) @ VGS = 4.5V RDS(ON) = 110mΩ(typ.) @ VGS = 2.5V Super High Density Cell Design Reliable and Rugged SO-8 Package
Pin Description
S S S G
1 2 3 4
8 7 6 5
D D D D
Applications
•
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
G
SO − 8
D D D D
S
S S
Ordering and Marking Information
APM 9430
H a n d lin g C o d e Tem p. R ange P ackage C ode
N-Channel MOSFET
P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p .