FQP8N60 - 600V N-Channel MOSFET

General Description

This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

7.5A,600V,RDS(on)=1.0Ω@VGS=10V.
Low gate charge.
Low Crss (typical 23pF).
Fast switching.
100% AvalancheTested.
Improved dv/dt capability.
ROHS product General.

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FQP8N60 600v n-channel mosfet by AOKE - Datasheet Preview

Datasheet Details

Part number	FQP8N60
Manufacturer	AOKE
File Size	560.64 KB
Description	600V N-Channel MOSFET
Datasheet	FQP8N60 Datasheet

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Other Datasheets by AOKE

Part Number	Description
FQPF8N60	600V N-Channel MOSFET

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FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability ■ ROHS product General Description This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.