Datasheet Summary
FQP8N60/FQPF8N60
600V N-Channel MOSFET
Features
- 7.5A,600V,RDS(on)=1.0Ω@VGS=10V
- Low gate charge
- Low Crss (typical 23pF)
- Fast switching
- 100% AvalancheTested
- Improved dv/dt capability
- ROHS product
General Description
This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge...
