FQP8N60 Overview
This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FQP8N60 Key Features
- 7.5A,600V,RDS(on)=1.0Ω@VGS=10V
- Low gate charge
- Low Crss (typical 23pF)
- Fast switching
- 100% AvalancheTested
- Improved dv/dt capability
- ROHS product
