PF8N60
Description
This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
Key Features
- 7.5A,600V,RDS(on)=1.0Ω@VGS=10V
- Low gate charge
- Low Crss (typical 23pF)
- Fast switching
- 100% AvalancheTested
- Improved dv/dt capability
- ROHS product
