AD560X - 60V 5A ULTRA LOW VF TMOS Schottky

Key Features

Reduced low forward voltage drop (VF) ; better efficiency and cooler operation.
Reduced high temperature reverse leakage; Increased reliability against thermal runaway failure in high temperature operation.
Softest, fast switching capability.
150℃ Operating Junction Temperature.
Lead Free Finish, RoHS Compliant Typical.

AD560X 60v 5a ultra low vf tmos schottky by AP Semiconductor - Datasheet Preview

Datasheet Details

Part number	AD560X
Manufacturer	AP Semiconductor
File Size	420.12 KB
Description	60V 5A ULTRA LOW VF TMOS Schottky
Datasheet	AD560X Datasheet

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AD560X 60V 5A ULTRA LOW VF TMOS Schottky Characteristics Summary Characteristics Values IF(AV) 5 VRRM 60 VF TYP @ 2A, TJ = 25℃ 0.44 Units A V V AD560X (DO201) IRMAX @ TJ = 25℃ 25 uA Features  Reduced low forward voltage drop (VF) ; better efficiency and cooler operation.  Reduced high temperature reverse leakage; Increased reliability against thermal runaway failure in high temperature operation.  Softest, fast switching capability  150℃ Operating Junction Temperature  Lead Free Finish, RoHS Compliant Typical Applications Device optimized for low forward voltage drop to suitable efficiency in general rectification applications.