The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AM4N65R
650V 4A Advanced N-Ch Power MOSFET
FEATURES
■ Low drain-source On resistance : RDS(on) = 2.4Ω (Typ.) ■ Low gate charge : Qg = 12nC (Typ.) ■ Low reverse transfer capacitance : Crss = 12pF (Typ.) ■ Lower EMI Noise ■ RoHS compliant device ■ 100% avalanche tested
Marking Information Row 1 : AP Row 2 : Product Information Row 3 : Date Code
- YY : Year Code - WW : Week Code Ordering Information
AM4N65RF
TO-220F AM4N65RD
D S
G TO-252
Part No.