AP Semiconductor AM4N65R
650V 4A Advanced N-Ch Power MOSFET
| Part No. | AM4N65R |
|---|---|
| Datasheet | AM4N65R Download |
| Manufacturer | AP Semiconductor |
| Description | 650V 4A Advanced N-Ch Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low drain-source On resistance : RDS(on) = 2.4Ω (Typ.)● Low gate charge : Qg = 12nC (Typ.)
● Low reverse transfer capacitance : Crss = 12pF (Typ.)
● Lower EMI Noise
● RoHS compliant device
● 100% avalanche tested Marking Information Row 1 : AP Row 2 : Product Information Row 3 : Date Code - YY : Year Code - WW : Week Code Ordering Information AM4N65RF TO-220F AM4N65RD D S G TO-252 Part No. AM4N65RF AM4N65RD Package TO-220F TO-252 Packing Tube Tape & Reel Finish Sn Sn Halogen Free Free Packing Unit 5,000ea 2,500ea
MAXIMUM RATINGS
(TC=25 °C, unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC)* Drain current (Pulsed)* Power Dissipation Single pulsed avalanche energy (Note 2) Avalanche current (Repetitive) (Note 1) Repetitive avalanche energy (Note 1) Junction temperature Storage temperature range *Limited only maximum junction temperature Symbol VDSS VGSS TC = 25℃ ID TC = 100℃ IDM PD TO-220F TO-252 EAS IAR EAR TJ Tstg Rating 650 ±30 4 2.53 16 32 48 173 4 3.2 150 -55~150 Unit V V A A W mJ A mJ ℃ REV.
