AM4N65R
Key Features
- Low drain-source On resistance : RDS(on) = 2.4Ω (Typ.)
- Low gate charge : Qg = 12nC (Typ.)
- Low reverse transfer capacitance : Crss = 12pF (Typ.)
- Lower EMI Noise
- RoHS pliant device
- 100% avalanche tested Marking Information Row 1 : AP Row 2 : Product Information Row 3 : Date Code
