SBR20A40CTF Datasheet | APD

SBR20A40CTF-prel Using state-of-the-art SBR IC process technology, the following Features are made possible in a single device: Major ratings and characteristics Values Characteristics IF(AV) Rectangular Waveform VRRM VF@10A, Tj=125o C Tj(operating/storage) 20 40 0.41 -65 to 175 Units A V V, typ o Anode ELECTRICAL: - Ultra Low Forward Voltage Drop - High Thermal SBR Reliability - Reliable High Temperature Operation - Super Barrier Design - Softest, fast switching capability o - 175 C Operating Junction Temperature 1 mon Cathode Anode Device optimized for low forward voltage drop to maximize efficiency in Power Supply applications MECHANICAL: - Molded Plastic ITO-220 package Maximum Ratings and Electrical Characteristics o (at 25 C unless otherwise specified) SYMBOL DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Reverse Voltage .. UNITS 40 40 20 180 3 Typ 0.44 0.56 0.41 Typ .22 20 10,000 2 -65 to +175 Max 0.48 0.60 0.45 Max 1 100 Volts Volts Amps Amps Amps VRM VRWM VRRM VR(RMS) IO IFSM IRRM RMS Reverse Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave)-50% duty cycle Peak Forward Surge Current - 1/2 60hz Peak Repetitive Reverse Surge Current (2u S-2Khz) Instantaneous Forward Voltage (per leg) IF = 10A; TJ = 25OC IF = 20A; TJ = 25OC IF = 10A; TJ= 125o C Maximum Reverse Current at Rated VRM TJ = 25OC TJ = 125OC Maximum Rate of Voltage Change (at Rated VR) Maximum Thermal Resistance JC Operating and Storage Junction Temperature NOTE: Dice are available for customer applications. - Pulse width < 300 u S, Duty cycle < 2% Volts IR- dv/dt RθJC TJ m A m A V/u S C/W ___________________________________________________________________________________________________ .apdsemi. 5/3/05 1 SBR20A40CTF-prel...