DESCRIPTION
AP0103 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS@Tj=125oC RDS(ON) ID 40V 2.55mΩ 140A D D D D S S S G PMPAK® 5x6 ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS@Tj=125oC Drain-Source Voltage 40 V VGS Gate-Source Voltage +20 V ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM Drain Current (Chip), VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 140 34.6 27.7 200 A A A A PD@TC=25℃ Total Power Dissipation 83.3 W PD@TA=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy4 5W 28.8 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resist...
Advanced Power Electronics
