DESCRIPTION
AP0103 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS@Tj=125oC RDS(ON) ID 40V 2.99mΩ 220A G D S TO-220(P) ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS@Tj=125oC VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V3 Pulsed Drain Current1 PD@TC=25℃ PD@TA=25℃ TSTG TJ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 40 +20 220 80 80 320 250 2 -55 to 150 -55 to 150 Units V V A A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change withou...
Advanced Power Electronics
