DESCRIPTION
AP01N40 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G D S TO-252(H) G D S TO-251(J) ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 +20 0.5 0.4 2 17.4 Units V V A A A W W mJ ℃ ℃ Total Power Dissipation Total Power Dissipation 4 2 2 0.5 -55 to 150 -55 to 150 Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 7.2 62.5 110 Units ℃/W ℃/W ℃/W 1 201307113 Maximum Ther...