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AP02N40I-HF Datasheet PDF

Advanced Power Electronics AP02N40I-HF

The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
Part No. AP02N40I-HF
Datasheet AP02N40I-HF Download
Manufacturer
Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP02N40I-HF datasheet page 1 preview

DESCRIPTION

AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness. G D S TO-220CFM(I)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 +30 1.6 1 3 27.8 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.5 65 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 201101051 AP02N40I-HF

ELECTRICAL CHARACTERISTICS

@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Volta...
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