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AP02N60H Datasheet PDF

Advanced Power Electronics AP02N60H

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications.
Part No. AP02N60H
Datasheet AP02N60H Download
Manufacturer
Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP02N60H datasheet page 1 preview

DESCRIPTION

G D G D S S TO-252(H) TO-251(J)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ±30 1.6 1 6 39 0.31 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 64 1.6 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 110 Units ℃/W ℃/W 200705051-1/4 Data & specifications subject to change without notice AP02N60H/J

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 600 2 - Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14 Max.
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