AP02N60I-HF Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP02N60I-HF

The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.

Part No.	AP02N60I-HF
Datasheet	AP02N60I-HF Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

AP02N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID4 600V 8Ω 2A G DS TO-220CFM(I)

ABSOLUTE MAXIMUM RATINGS

@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V4 Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy2 Storage Temperature Range Operating Junction Temperature Range 600 +30 2 1.26 3.6 22 80 -55 to 150 -55 to 150 V V A A A W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 5.7 65 Unit ℃/W ℃/W 1 201502255 AP0...