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AP02N60J-H Datasheet PDF

Advanced Power Electronics AP02N60J-H

The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J-H) is available for low-profile applications.
Part No. AP02N60J-H
Datasheet AP02N60J-H Download
Manufacturer
Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP02N60J-H datasheet page 1 preview

DESCRIPTION

G D G D S S TO-252(H) TO-251(J)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 +30 1.4 0.9 5.6 39 0.31 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 49 1.4 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 3.2 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 1 200807222 AP02N60H/J-H

ELECTRICAL CHARACTERISTICS

@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Sou...
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