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AP02N70EI Datasheet PDF

Advanced Power Electronics AP02N70EI

The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
Part No. AP02N70EI
Datasheet AP02N70EI Download
Manufacturer
Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP02N70EI datasheet page 1 preview

DESCRIPTION

AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. G D S TO-220CFM(I)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 ±20 1.6 1 6.4 27.8 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 13 1.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.5 65 Units ℃/W ℃/W Data & specifications subject to change without notice 1 200801121 Downloaded from Elcodis.com electronic components distributor AP02N70EI

ELECTRICAL CHARACTERISTICS

@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON)...
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