AP02N90H-HF Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP02N90H-HF

The TO-252 package is widely preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP02N90J) is available for low-profile applications.

Part No.	AP02N90H-HF
Datasheet	AP02N90H-HF Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 900 +30 1.9 1.2 6 62.5 0.5 Units V V A A A W W/ ℃ W mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Total Power Dissipation Avalanche Current Storage Temperature Range Operating Junction Temperature Range 4 2 2 18 1.9 -55 to 150 -55 to 150 Single Pulse Avalanche Energy Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 2 62.5 110 Units ℃/W ℃/W ℃/W 1 201008115 Maximum Thermal Resistance, Junction-ambient Data & sp...