AP03N40AI-HF Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP03N40AI-HF

The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.

Part No.	AP03N40AI-HF
Datasheet	AP03N40AI-HF Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Buy	Stock & Price

DESCRIPTION

AP03N40A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDS VGS ID@TC=25℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range G DS TO-220CFM(I) Rating 400 +20 2.7 10 27.8 1.92 -55 to 150 -55 to 150 Units V V A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 4.5 65 Unit ℃/W ℃/W 1 201303121 AP03N40AI-HF

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.