DESCRIPTION
D D D D SO-8 G SS S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 30V 4.5mΩ 18.7A D G S ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range TJ Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Rating 30 +20 18.7 15 60 2.5 -55 to 150 -55 to 150 Value 50 Units V V A A A W ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 1 200810091 AP0403GM ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source...
Advanced Power Electronics
