DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252 (H) G D S TO-251 (J) ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 200 ± 30 8.6 5.5 36 69 0.55 2 Units V V A A A W W/ °C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 40 8.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.8 110 Unit °C/W °C/W Ordering Information AP09N20H-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) AP09N20J-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube) ©2009 Advanced Power Electronics Corp.