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AP1001BSQ-3 Datasheet PDF

Advanced Power Electronics AP1001BSQ-3

The AP1001BSQ-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The GreenFETTM package is compatible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters.
Part No. AP1001BSQ-3
Datasheet AP1001BSQ-3 Download
Manufacturer
Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP1001BSQ-3 datasheet page 1 preview

DESCRIPTION

GreenFETTM D G S D

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID at TA=25°C ID at TA=100°C ID at TC=25°C IDM C PD at TA=25° PD at TA=70°C C PD at TC=25° EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 3 SQ Rating 25 ±20 15 12 59 120 2.2 1.4 34 5 Units V V A A A A W W W mJ A °C °C Continuous Drain Current Pulsed Drain Current 1 3 3 4 Continuous Drain Current Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current 4 Single Pulse Avalanche Energy Storage Temperature Range 28.8 24 -40 to 150 -40 to 150 Operating Junction Temperature Range Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient 3 3.7 58 °C/W °C/W Ordering Information AP1001BSQ-3TR RoHS-compliant halogen-free GreenFETTM SQ package, shipped on tape and reel (4800 pcs/reel) ©2009 Advanced Power Electronics Corp. USA 20090923-3 PRELIMINARY 1/5 Advanced Power Electronics Corp. Electr...
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