DESCRIPTION
AP14SL50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. VDS @ Tj,max. RDS(ON) ID 550V 0.28Ω 13A GD S TO-220CFM(I) . ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1 +20 V 13 A 8.2 A 32 A PD@TC=25℃ PD@TA=25℃ Total Power Dissipation Total Power Dissipation 31.2 W 1.92 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 4 65 Units ℃/W ℃/W 1 201408282 AP14SL50I-HF ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Advanced Power Electronics
